Multimode and random directionalities are major issues restricting the application of whispering gallery mode microcavity lasers. We demonstrated a 40 μm diameter microring with an off-centered embedded hole and warped geometry from strained III-nitride quantum well multilayers. Single-mode directional whispering gallery mode lasing was achieved by the warped structure and high-order mode suppression induced by the off-centered hole. In addition, the introduction of the off-centered hole reduced the lasing threshold from 3.24 to 2.79MW/cm2 compared with the warped microdisk without an embedded hole while maintaining a high-quality factor of more than 4000. Directional light emission in 3D was achieved and attributed to the warped structure, which provides a vertical component of the light emission, making it promising for building multifunctional coherent light sources in optoelectronic integration.

Indium gallium nitride (InGaN)-based light-emitting diodes (LEDs) are considered a promising candidate for red-green-blue (RGB) micro displays. Currently, the blue and green LEDs are efficient, while the red ones are inefficient for such applications. This paper reports our work of creating efficient InGaN-based orange and red LEDs on silicon(111) substrates at low current density. Based on the structure of InGaN yellow LEDs, by simply reducing the growth temperature of all the yellow quantum wells (QWs), we obtained 599 nm orange LEDs with peak wall-plug efficiency (WPE) of 18.1% at 2A/cm2. An optimized QW structure was proposed that changed two of the nine yellow QWs to orange ones. Compared with the sample containing nine orange QWs, the sample with two orange QWs and seven yellow QWs showed similar emission spectra but a much higher peak WPE up to 24.0% at 0.8A/cm2 with a wavelength of 608 nm. The improvement of peak WPE can be attributed to the improved QW quality and the reduced active recombination volume. Subsequently, a series of efficient InGaN-based orange and red LEDs was demonstrated. With further development, the InGaN-based red LEDs are believed to be attainable and can be used in micro LED displays.

A full structure 290-nm ultraviolet light-emitting diode (UV-LED) with a nanoporous n-AlGaN underlayer was fabricated by top via hole formation followed by high-voltage electrochemical etching. The 20 to 120 nm nanopores were prepared in regular doped n-AlGaN by adjusting the etching voltage. The comparison between the Raman spectrum and the photoluminescence wavelength shows that the biaxial stress in the nanoporous material is obviously relaxed. The photoluminescence enhancement was found to be highly dependent on the size of the pores. It not only improves the extraction efficiency of top-emitting transverse-electric (TE)-mode photons but also greatly improves the efficiency of side-emitting transverse-magnetic (TM)-mode photons. This leads to the polarization change of the side-emitting light from ?0.08 to ?0.242. The intensity of the electroluminescence was increased by 36.5% at 100 mA, and the efficiency droop at high current was found to decrease from 61% to 31%.

We experimentally demonstrate a Faraday laser at Rb 1529 nm transition by using a performance-improved Rb electrodeless-discharge-lamp-based excited-state Faraday anomalous dispersion optical filter as the frequency-selective element. Neither the electrical locking scheme nor the additional frequency-stabilized pump laser are used. The frequency of the external-cavity diode laser is stabilized to the Rb 1529 nm transition, and the Allan deviation of the Faraday laser is measured by converting the optical intensity into frequency. The Faraday laser can be used as a frequency standard in the telecom C band for further research on metrology, microwave photonics, and optical communication systems.